 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HAT1090C Silicon P Channel MOS FET Power Switching REJ03G1228-0400 Rev.4.00 Jun. 13, 2005 Features * Low on-resistance RDS(on) = 50 m typ. (at VGS = -4.5 V) * Low drive current. * 2.5 V gate drive devices. * High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2345 DDD D 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board. (FR4 40 x 40 x 1.6mm), Ta = 25C Symbol VDSS VGSS ID ID (pulse)Note1 IDR PchNote 2 Tch Tstg Ratings -20 12 -2.5 -10 -2.5 900 150 -55 to +150 Unit V V A A A mW C C Rev.4.00, Jun. 13, 2005, page 1 of 6 HAT1090C Electrical Characteristics (Ta = 25C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time Turn - off delay time Fall time Body - Drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) RDS(on) | yfs | Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF Min. -20 12 -- -- -0.4 -- -- 3.5 -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- -- 50 74 5.5 590 175 60 7 1.2 2.5 15 17 40 20 -0.8 Max. -- -- 10 -1 -1.4 65 104 -- -- -- -- -- -- -- -- -- -- -- -1.1 Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V Test Conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 10 V, VDS = 0 VDS = -20 V, VGS = 0 ID = -1 mA, VDS = -10 V Note3 ID = -1.3 A, VGS = -4.5 V Note3 ID = -1.3 A, VGS = -2.5 V Note3 ID = -1.3 A, VDS = -10 V Note3 VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = -4.5 V, ID = -2.5 A VDS = -10 V, VGS = -4.5 V, ID = -1.3 A, RL = 7.7 , Rg = 4.7 IF = -2.5 A, VGS = 0 Rev.4.00, Jun. 13, 2005, page 2 of 6 HAT1090C Main Characteristics Power vs. Temperature Derating 1.6 -100 Maximum Safe Operation Area -30 -10 When using the FR4 board. 1 shot pulse, Ta = 25C 10 s 100 s Power Dissipation Pch (W) 1.2 Drain Current ID (A) Test condition. When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm) -3 -1 DC op 1 PW = 10 m s 0.8 m s -0.3 -0.1 -0.03 Operation in this area is limited by RDS(on) io at er n 0.4 0 50 100 150 200 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -30 -100 Ambient Temperature Tc (C) Drain Source Voltage VDS (V) Typical Transfer Characteristics -10 Typical Output Characteristics -10 -10 V -4.5 V -2.5 V Pulse Test -2.2 V (A) -8 (A) VDS = -10 V Pulse Test -8 25C Tc = 75C -2 V -25C Drain Current ID -6 Drain Current ID -1.8 V -1.6 V VGS = -1.4 V -6 -4 -4 -2 -2 0 -2 -4 -6 -8 -10 0 -1 -2 -3 -4 -5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test -120 Drain to Source on State Resistance RDS(on) (m) Drain to Source Saturation Voltage VDS(on) (mV) -160 Static Drain to Source on State Resistance vs. Drain Current 1000 -80 100 VGS = -2.5 V -1.3 A -40 -4.5 V -1 A Pulse Test 10 -0.1 -1 -10 -100 0 -6 -2 -4 Gate to Source Voltage -8 -10 VGS (V) Drain Current ID (A) Rev.4.00, Jun. 13, 2005, page 3 of 6 HAT1090C Static Drain to Source on State Resistance vs. Temperature 200 Pulse Test 160 Static Drain to Source on State Resistance RDS(on) (m) Forward Transfer Admittance |yfs| (S) Forward Transfer Admittance vs. Drain Current 100 30 10 3 1 75C 0.3 VDS = -10 V Pulse Test 120 80 -2.5 V ID = -2.5 A -1, -1.3 A Tc = -25C 25C 40 VGS = -4.5 V ID = -1, -1.3, -2.5 A 0 -25 0 25 50 75 100 125 150 0.1 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 Case Temperature Tc (C) Drain Current ID (A) Dynamic Input Characteristics VDS (V) VGS (V) 0 -10 -2 VDD = -5 V -10 V -20 V Drain to Source Voltage Capacitance C (pF) VDD = -5 V -10 V -20 V 0 10000 3000 1000 300 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Gate to Source Voltage Ciss -20 VDD -4 Coss 100 30 10 -30 VGS ID = -2.5 A -40 0 4 8 12 16 -6 Crss -8 20 0 Gate Charge Qg (nC) -10 Drain to Source Voltage -20 VDS (V) IDR (A) -10 Reverse Drain Current vs. Source to Drain Voltage 1000 Switching Characteristics VGS = -4.5 V, VDD = -10 V RG = 4.7 , Ta = 25C -8 -6 -5 V Switching Time t (ns) td(off) 100 tr tf 10 td(on) Reverse Drain Current VGS = 0, 5 V -4 -2 Pulse Test 0 -0.4 -0.8 -1.2 -1.6 -2.0 1 -0.1 -0.3 Source to Drain Voltage VSD (V) -1 -3 Drain Current -10 -30 -100 ID (A) Rev.4.00, Jun. 13, 2005, page 4 of 6 HAT1090C Switching Time Test Circuit Vin Monitor D.U.T. RL 4.7 Vin -4.5 V V DD = -10 V Vout td(on) 90% 10% tr td(off) 90% 90% 10% tf Vout Monitor Vin 10% Waveform Rev.4.00, Jun. 13, 2005, page 5 of 6 HAT1090C Package Dimensions JEITA Package Code RENESAS Code PWSF0006JA-A Package Name CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g D e A c LP E HE A xM A S A b L Reference Symbol Dimension in Millimeters e A2 A yS A1 S e1 b b1 l1 c1 b2 Pattern of terminal position areas A A1 A2 b b1 c c1 D E e HE L LP x y b2 e1 l1 Min 0.6 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 Nom 0.22 0.2 0.13 0.11 2.0 1.7 0.65 2.1 0.2 Max 0.8 0.01 0.79 0.3 0.15 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 0.5 c A-A Section 1.65 Ordering Information Part Name HAT1090C-EL-E Quantity 3000 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00, Jun. 13, 2005, page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 http://www.renesas.com (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .2.0 |
Price & Availability of HAT1090C
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |